Monte Carlo simulation of boron implantation into single-crystal silicon

Abstract

An improved Monte Carlo simulation model has been developed for boron implantation into single-crystal silicon. This model is based on the Marlowe Monte Carlo code and contains significant improvements for the modeling of ion implantation, including a newly developed local electron concentration-dependent electronic stopping model and a newly developed cumulative damage model. These improvements allow the model to reliably predict boron implant profiles not only as a function of energy, but also as a function of other important implant parameters such as tilt angle, rotation angle, and dose. In addition, profiles of implant generated point defects (silicon interstitials and vacancies) can be calculated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>