Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

Nanoionics-based resistive switching memories

Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.7K citations

Electrical Engineering, Engineering, Nanotechnology +5

Memristive switching mechanism for metal/oxide/metal nanodevices

J. Joshua Yang, Matthew D. Pickett, Xuema Li et al. · Nature Nanotechnology · 2008 · 2.9K citations

Electrical Engineering, Engineering, Memristive Switching Mechanism +7

Resistive switching in transition metal oxides

Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text

Materials Science, Non-volatile Memory, Electrical Engineering +15

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Deok‐Hwang Kwon, Kyung Min Kim, Jae Hyuck Jang et al. · Nature Nanotechnology · 2010 · 2.1K citations

Materials Science, Engineering, Nanomaterials +7

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

Byung Joon Choi, Dong Seop Jeong, Seong Keun Kim et al. · Journal of Applied Physics · 2005 · 1.1K citations

Engineering, Tiny Conducting Filaments, Thin Film Process Technology +18