Feng Zhang

Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

Feng Zhang, H. R. Zhang, Sergiy Krylyuk et al. · Nature Materials · 2018 · 445 citations

Materials Science, Engineering, Emerging Memory Technology +7

Photoinduced Superwetting Single-Walled Carbon Nanotube/TiO₂ Ultrathin Network Films for Ultrafast Separation of Oil-in-Water Emulsions

Shoujian Gao, Zhun Shi, Wen Bin Zhang et al. · ACS Nano · 2014 · 380 citations

An Artificial Neuron Based on a Threshold Switching Memristor

Xumeng Zhang, Wei Wang, Qi Liu et al. · IEEE Electron Device Letters · 2017 · 378 citations

Electrical Engineering, Synaptic Plasticity, Engineering +15

A computing-in-memory macro based on three-dimensional resistive random-access memory

Qiang Huo, Yang Yi-ming, Yiming Wang et al. · Nature Electronics · 2022 · 132 citations · Full text

Non-volatile Memory, Engineering, Energy Efficiency +23

A 28nm 16.9-300TOPS/W Computing-in-Memory Processor Supporting Floating-Point NN Inference/Training with Intensive-CIM Sparse-Digital Architecture

Jinshan Yue, Chaojie He, Zi Wang et al. · 2023 · 65 citations

Engineering, Computer Architecture, Hardware Systems +17