Ar ion laser irradiation effects on the MOVPE growth of ZnSe using dimethyl zinc and hydrogen selenide as reactants

Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x-ray photoelectron spectroscopy (XPS)

Steven P. Kowalczyk, E. A. Kraut, J. R. Waldrop et al. · Journal of Vacuum Science and Technology · 1982 · 151 citations

Engineering, Materials Engineering, Materials Science +17

Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnS

Shizυo Fujita, Akira Tanabe, Takao Sakamoto et al. · Journal of Crystal Growth · 1988 · 77 citations

Engineering, Materials Engineering, Materials Science +5

Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe

Shigeo Fujita, Akira Tanabe, Takao Sakamoto et al. · Japanese Journal of Applied Physics · 1987 · 72 citations

Natural Sciences, Materials Engineering, Materials Science +12

Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants

Akihiko Yoshikawa, Tamotsu Okamoto, Tsuyoshi Fujimoto et al. · Japanese Journal of Applied Physics · 1990 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +7

The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPE

Takashi Yasuda, Yoshihisa Koyama, Jun Wakitani et al. · Japanese Journal of Applied Physics · 1989 · 47 citations

Engineering, Materials Engineering, Materials Science +17