Some Observations on Conduction through Thin Tantalum Oxide Films

Abstract

The electrical properties of several tantalum oxide diodes with various metal counterelectrodes have been studied. The devices were prepared on sputtered tantalum by anodizing to the desired oxide thickness (100–200 Å) and evaporating the second metal electrode in vacuum. The devices show a work function dependence on the second metal electrode that also appears to be affected by the manner in which the original tantalum was prepared. The temperature behavior of this and several other oxide diode systems follow a Schottky relation fairly well, with deviations at low temperatures and thinner oxide layers, as expected.