Preparation of Bismuth Titanate Thin Films by Laser Ablation

Abstract

Ferroelectric bismuth titanate thin films have been prepared on Si substrates at low temperature by the laser ablation method using an ArF laser. Dependences of crystallographic property of the film on substrate temperature, O 2 gas pressure, laser repetition frequency and annealing temperature are presented. The preferentially c -axis-oriented films have been obtained on Si substrates at a substrate temperature of 400° C with annealing at 700° C, and on Pt substrates at a low substrate temperature of 450° C.