Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl₂

Abstract

We have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using HI/Cl2 gasses at a low process temperature of 90°C. We measured the etching rate by varying bias power. A small flow rate of HI was required to obtain vertical profiles. We consider that HI/Cl2-ICP etching is useful in InP-based device fabrication with a resist mask.