Silicon Nitride–Silicon Carbide Refractories Produced by Reaction Bonding

N. Kishan Reddy, J. Mukerji

Journal of the American Ceramic Society · 1991 · 30 citations · 5 references

Concepts

Abstract

Silicon nitride‐silicon carbide refractories have been prepared by reaction bonding. The percentage of silicon nitride in the refractory was varied from 5 to 45 wt%. The modulus of rupture of refractories increases with an increase of temperature, whereas thermal expansion decreases. These refractories are resistant to molten non‐ferrous metals but are attacked by molten cast iron.

References

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