Synthesis and SAW characteristics of AlN thin films fabricated on Si and GaN using helicon sputtering system

Sheng-Wen Chen, H.F. Lin, Taehyun Sung, Jia‐Ren Wu, Hui-Ling Kao, J.S. Chen

Electronics Letters · 2003 · 10 citations · 5 references

Concepts

Abstract

High quality AlN films have been obtained on SiO2/Si and GaN/Sapphire using the helicon sputtering method. Fabrication of the thin film layered structure surface acoustic wave (SAW) devices has been demonstrated and the promising characteristics are presented.

References

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