Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells

Material parameters of In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> and related binaries

Sadao Adachi · Journal of Applied Physics · 1982 · 770 citations

Natural Sciences, Materials Engineering, Materials Science +17

Crystal Interfaces. Part II. Finite Overgrowths

J. H. van der Merwe · Journal of Applied Physics · 1963 · 670 citations

Natural Sciences, Materials Science, Physics +17

Band structure engineering of semiconductor lasers for optical communications

Eli Yablonovitch, E. O. Kane · Journal of Lightwave Technology · 1988 · 325 citations

Natural Sciences, Materials Science, Physics +17

Optical characterization of pseudomorphic In<i>x</i>Ga1−<i>x</i>As–GaAs single-quantum-well heterostructures

Neal G. Anderson, W. D. Laidig, R. M. Kolbas et al. · Journal of Applied Physics · 1986 · 139 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

H. Kawai, K. Kaneko, N. Watanabe · Journal of Applied Physics · 1984 · 103 citations

Engineering, Materials Engineering, Materials Science +17