Journal of Applied Physics · 1980 · 25 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportP-n JunctionsPhotovoltaic DevicesSemiconductor Device MaterialsSolar Cell MaterialsSolar CellsCarrier DiffusionCarrier Transport In SemiconductorsDiffusion LengthEnergy Conversion EfficiencyP-n Junction Solar CellsSolar Cell Device PhysicsSolar Energy ConversionSurface Recombination
The minority-carrier diffusion length Le for electrons in p-CuInSe2 was determined by analyzing the magnitude of the electron beam induced current (EBIC) as a function of distance from the p/n junction in an n-CdS/p-CuInSe2 solar cell whose solar energy conversion efficiency was about 8%. Data obtained for electron beam energies of 10, 20, and 30 keV showed that Le was at least 0.92 μm. Analysis of the data in terms of a model in which the injection process is approximated by a point source results in a value of Le ∼2.5 μm and a surface recombination velocity of about 1.4×106 cm/sec on a as-cut surface. The analysis leads to the inference that the ’’point source’’ is located at a depth equal to about 0.06 times the electron range below the surface on which the beam is incident.
8
CuInSe2/CdS heterojunction photovoltaic detectors
S. Wagner, J. L. Shay, P. Migliorato et al. · Applied Physics Letters · 1974 · 403 citations
Efficient CuInSe2/CdS solar cells
J. L. Shay, S. Wagner, H. M. Kasper · Applied Physics Letters · 1975 · 287 citations