Temperature insensitive linewidth enhancement factor of p-type doped InAs∕GaAs quantum-dot lasers emitting at 1.3μm

Abstract

The temperature dependence of microwave properties—relaxation frequency and Henry factor—of undoped and p-type doped ten InAs∕GaAs quantum-dot layer lasers is reported in the 20–80°C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40°C.