EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDevice ScalingDielectricsMemory DevicesOxide SemiconductorsSemiconductor Device MaterialsDevice Scaling EffectsEquivalent Oxide ThicknessGate Oxide ScalingLayer Thickness ScalingMoore's Law ScalingNon-volatile MemoryNon-volatile Memory DesignScaling Effects
ONO(oxide-Nitride-oxide) interpoly dielectric thickness scaling, as well as tunnel oxide scaling, is one of the most important considerations in realizing high density non-volatile memory devices. Interpoly dielectric thickness dominates the programming speed and read current of a cell transistor.
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