Proceedings of the IRE · 1961 · 26 citations · 23 references
Device ModelingElectrical EngineeringEngineeringTransistor Internal ParametersCircuit DesignMeasurementCircuit SystemComputer EngineeringSmall-signal Equivalent-circuit RepresentationEducationEquivalent-circuit RepresentationInstrumentationMicroelectronicsApproximation TheorySignal ProcessingCircuit AnalysisElectromagnetic CompatibilityElectronic Circuit
The joint IRE-AIEE Task Group 28.4.7, on Transistor Internal Parameters, was organized with the following objectives: 1) To formulate a small-signal equivalent-circuit representation of a transistor, the parameters of which emphasize separately the principal physical mechanisms of the device. 2) To recommend symbols for these parameters consistent with accepted usage and other standards. 3) To exhibit the relationship between the equivalent-circuit representation described in item 1 above and those simplified representations commonly employed in circuit analysis or design. 4) To propose and discuss methods of determining these parameters from electrical measurements at the terminals. This report summarizes the work of the group on the first three of these objectives.
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Large-Signal Behavior of Junction Transistors
J. Ebers, J.L. Moll · Proceedings of the IRE · 1954 · 602 citations
Avalanche Breakdown in Germanium
S. L. Miller · Physical Review · 1955 · 373 citations