Electronics Letters · 1984 · 11 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersWide Band Gap SemiconductorsCurrent TemperatureHeterostructure LasersHigh-temperature Device OperationIntegrated Semiconductor LasersLeakageTemperature Dependence Of Laser PerformanceTemperature SensitivityThreshold Sensitivity
High-temperature operation of InGaAsP double-channel buried-heterostructure (DCBH) lasers emitting at 1.55 μm is reported. The 1.55 μm InGaAsP DCBH lasers have threshold currents as low as 18 mA at 20°C. The threshold current temperature sensitivity between 10°C and 75°C is characterised by a T0 value of 55–66 K. Electro-optical derivative measurements show that the 1.55 μm InGaAsP DCBH laser does not have substantial above-threshold leakage current for junction temperatures as high as 75°C. Finally, these devices were operated at temperatures as high as 110°C, the highest CW operating temperature obtained to date for a 1.55 μm InGaAsP laser.
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