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Double-channel planar buried-heterostructure laser diode with effective current confinement
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1982
Year
Semiconductor TechnologyPhotonicsElectrical EngineeringEffective Current ConfinementEngineeringSemiconductor LasersHigh-power OperationApplied PhysicsLaser ApplicationsHigh-temperature OperationMultilayer HeterostructuresMicroelectronicsOptoelectronicsHigh-power LasersCompound SemiconductorSemiconductor Device
An InGaAsP double-channel planar buried-heterostructure laser diode has been developed in which a p-n-p-n current confinement structure effectively reduces the leakage current. High-power operation over 50 mW and high-temperature operation up to 130°C have been attained.