Surface activation behavior of negative-electron-affinity exponential-doping GaAs photocathodes

Photon-enhanced thermionic emission from heterostructures with low interface recombination

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Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range

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Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces

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Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes

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Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes

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