Characterization of the aluminium surface layer implanted with nitrogen

Epitaxial growth of GaN/AlN heterostructures

S. Yoshida, S. Misawa, S. Gonda · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 99 citations

Engineering, Materials Engineering, Materials Science +17

Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminum

N. Lieske, Rudolf Hezel · Journal of Applied Physics · 1981 · 79 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reactively rf magnetron sputtered AlN films as gate dielectric

A. Fathimulla, Amir A. Lakhani · Journal of Applied Physics · 1983 · 55 citations

Natural Sciences, Materials Science, Physics +17

Formation of AlN by nitrogen ion implantation

B. Rauschenbach, A. Kolitsch, E. Richter · Thin Solid Films · 1983 · 37 citations

Engineering, Materials Engineering, Materials Science +7

Aluminum nitride films by rf reactive ion-plating

Yoichi Murayama, Kunihiro Kashiwagi, Masasi Kikuchi · Journal of Vacuum Science and Technology · 1980 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +15