Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Hisato Yabuta, Masafumi Sano, Katsumi Abe et al. · Applied Physics Letters · 2006 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Hai Q. Chiang, John F. Wager, Randy Hoffman et al. · Applied Physics Letters · 2004 · 786 citations

Natural Sciences, Materials Engineering, Materials Science +17

42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT

Je‐hun Lee, D. G. Kim, Dongju Yang et al. · SID Symposium Digest of Technical Papers · 2008 · 248 citations

Engineering, Electrical Engineering, Materials Science +13

Surface characterization of transparent conductive oxide Al-doped ZnO films

Ming Chen, Z.L. Pei, Cheng Sun et al. · Journal of Crystal Growth · 2000 · 245 citations

Natural Sciences, Materials Engineering, Materials Science +14

High mobility indium free amorphous oxide thin film transistors

Elvira Fortunato, L. Pereira, Pedro Barquinha et al. · Applied Physics Letters · 2008 · 223 citations

Engineering, Electrical Engineering, Materials Science +17