CBE growth of AlGaAs/GaAs heterostructures and their device applications

Electrical characterization of epitaxial layers

G. E. Stillman, C. M. Wolfe · Thin Solid Films · 1976 · 206 citations

Natural Sciences, Electrical Engineering, Materials Science +14

Surface and interface depletion corrections to free carrier-density determinations by hall measurements

Amitabh Chandra, C. E. C. Wood, D. W. Woodard et al. · Solid-State Electronics · 1979 · 173 citations

Engineering, Electrical Engineering, Materials Science +16

Characterization of <i>p</i>-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxy

Koki Saito, Eisuke Tokumitsu, Takeshi Akatsuka et al. · Journal of Applied Physics · 1988 · 159 citations

Engineering, Materials Science, Physics +16

Electron mobility in Al<i>x</i>Ga1−<i>x</i>As

G. B. Stringfellow · Journal of Applied Physics · 1979 · 124 citations

Engineering, Materials Engineering, Materials Science +12

Electron mobility in compensated GaAs and Al<i>x</i>Ga1−<i>x</i>As

G. B. Stringfellow, H. Künzel · Journal of Applied Physics · 1980 · 63 citations · Full text

Engineering, Materials Engineering, Materials Science +15