Semiconductor Science and Technology · 1994 · 16 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsElectronic Band StructureQuantum Well DevicesQuantum WellsSemiconductor Crystal GrowthWide Band Gap SemiconductorsWide-bandgap SemiconductorsCritical ThicknessElectroluminescenceGas SensingQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well Structures
We describe the observation of electroluminescence from single quantum wells of GaSb/InxGa1-xSb, which covers the region from 1.8 to 2.12 mu m at room temperature. The structures are grown by MOVPE, and cover the range of well widths 25-200 A with a typical in content of 20%. The emission wavelength is found to increase with increasing well width until the critical thickness is exceeded, after which the emission is found to move back closer to the bulk GaSb band edge emission. Emission is observed up to 130 degrees C, indicating the considerable potential of this materials system for applications such as gas sensing.
11
Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations