Atomic Displacements in the Si(111)-(7×7) Surface

Abstract

The parallel and perpendicular displacements of atoms in the first few layers of Si(111)-(7\ifmmode\times\else\texttimes\fi{}7) have been determined with use of ion scattering. It was directly observed that the major reconstruction of this surface involves \ensuremath{\sim}0.4 \AA{} displacements perpendicular to the surface.