Focused ion beam etching of resist materials

Abstract

The self-developing and processing properties of nitrocellulose were investigated in comparison with the resists such as PMMA (polymethylmethacrylate) and PBS (polybutene-1-sulfone). Then self-developed submicron patterns were drawn in nitrocellulose with focused ion beam irradiation. A 200 nm thick, 370 nm wide aluminum line pattern was obtained by using a 520 nm thick nitrocellulose layer.