Focused ion beam etching of resist materials

K. Harakawa, Y. Yasuoka, K. Gamo, S. Namba

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 14 citations · 0 references

Concepts

Abstract

The self-developing and processing properties of nitrocellulose were investigated in comparison with the resists such as PMMA (polymethylmethacrylate) and PBS (polybutene-1-sulfone). Then self-developed submicron patterns were drawn in nitrocellulose with focused ion beam irradiation. A 200 nm thick, 370 nm wide aluminum line pattern was obtained by using a 520 nm thick nitrocellulose layer.