Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures

F. B. McLean · IEEE Transactions on Nuclear Science · 1980 · 580 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Mean energy required to produce an electron-hole pair in silicon for photons of energies between 50 and 1500 eV

Frank Scholze, Hans Rabus, G. Ulm · Journal of Applied Physics · 1998 · 144 citations

Engineering, Electrical Engineering, Materials Science +17

Chemical Vapor Deposition of α-Boron Layers on Silicon for Controlled Nanometer-Deep p + n Junction Formation

Francesco Sarubbi, T.L.M. Scholtes, Lis K. Nanver · Journal of Electronic Materials · 2009 · 79 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Recent progress of avalanche photodiodes in high-resolution X-rays and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si27.gif" overflow="scroll"><mml:mi>γ</mml:mi></mml:math>-rays detection

J. Kataoka, Tatsuhiko Saito, Y. Kuramoto et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2005 · 77 citations · Full text

Engineering, Radiology, Optoelectronics +16

Calculations of stopping powers of 100 eV to 30 keV electrons in 10 elemental solids

Shigeo Tanuma, C. J. Powell, David R. Penn · Surface and Interface Analysis · 2005 · 67 citations

Natural Sciences, Materials Science, Physics +12