IEEE Journal of Quantum Electronics · 2002 · 14 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesAdhesive BondingLight SourcesLight-emitting DiodesLuminescent MaterialsSemiconductor Device MaterialsWafer BondingCurrent InjectionCurrent Injection EfficiencyDevice PackagingEfficiencyGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting DevicesLuminescence Lifetime
A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.
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