Highly reliable and efficient semiconductor wafer-bondedAlGaInP/GaP light-emitting diodes

Abstract

Semiconductor wafer bonding is employed to fabricate very high efficiency transparent-substrate (TS) AlGaInP light-emitting diodes (LEDs) with projected lifetimes in excess of 100000 h under accelerated life test at an ambient temperature of 55°C (70 A/cm2). Furthermore, we demonstrate wafer-bonded TS AlGaInP red LEDs with external quantum efficiencies of 23.7% at 635.6 nm (20 mA, DC, 250°C).