Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes

Abstract

Hybrid-type distributed Bragg reflectors (DBRs) with InAlP/GaAs and InAlP/InGaAlP multilayers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The structure of the DBRs was designed using a theoretical calculations considering the absorption loss and refractive index of each stacked layer. The wide-band, high-reflectivity characteristics were also experimentally confirmed. Good electrical conductivity through InGaAlP light-emitting diodes (LEDs) with the hybrid-type DBRs was obtained in spite of the many interface needed for the multiple layers of the DBRs. A luminous intensity of 0.8 cd was obtained at 565.7 nm (nearly pure green light).