Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography

Abstract

Self-assembled nanoporous alumina films were employed as masks for MeV ion track lithography. Films with thickness of 2 μm and pore diameters of 30 and 70 nm were attached to thermally grown SiO2 covered with a thin gold layer. The samples were aligned with respect to the beam by detecting backscattered He+ ions with the initial energy of 2 MeV. The ordered pattern of the porous alumina films was successfully transferred into SiO2 after irradiation with a 4 MeV Cl2+ beam at fluence of 1014ions∕cm2, followed by chemical etching in a 5% HF solution.