Ordering in GaInP: Is it relevant for devices?

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

Akiko Gomyo, T. Suzuki, K. Kobayashi et al. · Applied Physics Letters · 1987 · 438 citations

Natural Sciences, Materials Science, Physics +17

Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

Akiko Gomyo, K. Kobayashi, S. Kawata et al. · Journal of Crystal Growth · 1986 · 235 citations

Natural Sciences, Materials Engineering, Materials Science +16

Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers

Yasuo Ohba, M. Ishikawa, Hideto Sugawara et al. · Journal of Crystal Growth · 1986 · 169 citations

Engineering, Materials Engineering, Materials Science +16

Effect of growth rate on the band gap of Ga0.5In0.5P

Sarah Kurtz, J. M. Olson, A. Kibbler · Applied Physics Letters · 1990 · 120 citations

Natural Sciences, Materials Science, Physics +14

Ordered structure in OMVPE-grown Ga0.5In0.5P

Masahiko Kondow, Hiroshi Kakibayashi, S. Minagawa · Journal of Crystal Growth · 1988 · 109 citations

Natural Sciences, Materials Engineering, Materials Science +10