Applied Physics Letters · 2003 · 65 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser OpticsOptical Properties Of SemiconductorsQuantum DotsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor LasersExcited StatesGround StatesMetalorganic Vapor Phase EpitaxyPulsed LasersQuantum Dot LasersSelf-assembled Quantum DotsTemperature SensitivityWaveguide Lasers
Single-stack InAs self-assembled quantum-dot (QD) lasers based on (001) InP substrates have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous-wave operation, and near room temperature in pulsed mode, with emission wavelengths between 1.59 to 1.74 μm. Above 200 K, a very low wavelength temperature sensitivity of 0.09 nm/K was observed. Lasing spectra at different temperatures suggests that the ground states and the excited states almost overlap, and form a quasicontinuous band due to the large size of the InAs dots and their inhomogeneous broadening. These results will provide guidance for further development of long wavelength InAs QD lasers based on InP substrates.
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Room-temperature operation of InAs quantum-dash lasers on InP [001]
Ruolin Wang, A. Stintz, P.M. Varangis et al. · IEEE Photonics Technology Letters · 2001 · 211 citations
Long-wavelength InP-based quantum-dash lasers
R. Schwertberger, David Gold, J.P. Reithmaier et al. · IEEE Photonics Technology Letters · 2002 · 173 citations
High-performance InAs quantum-dot lasers near 1.3 μm
Y. Qiu, P. Gogna, Siamak Forouhar et al. · Applied Physics Letters · 2001 · 94 citations