Electron-Spin-Resonance Measurements of the Spin Susceptibility of Heavily Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

Abstract

The results of relative spin-susceptibility measurements as a function of donor concentration are reported for heavily doped $n$-type silicon. It is shown that, at liquid helium temperatures, the susceptibility decreases with impurity concentration for samples in the impurity-band region. At still higher concentrations, the susceptibility is well described by the ${(\mathrm{concentration})}^{1/3}$ law expected for a degenerate electron gas.