Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity

Abstract

In order to investigate the effects of diffusion and convection on the melt mixing of semiconductors, experiments under microgravity in space and 1-g on earth were conducted. Sandwich combinations of In/GaSb/Sb solids closed in a BN cylinder were heated up to 733° C in space and 744° C on earth, and they were then cooled rapidly. In both samples, many needle crystals were distributed in the whole area. It was observed that the melt mixing in space was controlled by diffusion which was represented with an error function, and the diffusion coefficient of indium was given by a value of 2.4×10 -4 cm 2 / s. In the earth sample, however, the indium concentration distribution followed an exponential curve. This indicated that both factors, diffusion and thermal convection, have contributed to the mixing of semiconductor melts.