THRESHOLD AND SATURATION VOLTAGES MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT-FETs)

Abstract

We present analytical model equations for threshold voltage (V th ) and saturation voltage (V ds,sat ) characterizing CNT-FETs. These model equations have been obtained from the charge and potential distributions between the gate and substrate in a CNT-FET. It is shown that both V th and V ds,sat are strongly dependent on chiral vectors of CNTs. The results show close agreement between theoretical and graphical modeling techniques. It is also shown that the calculated V th of a CNT-FET with chiral vector (3, 1) is in close agreement with the corresponding published work.