An improved hydrodynamic transport model for silicon

Abstract

A closed set of hydrodynamic equations for silicon device analysis is obtained with the aid of self-consistent Monte Carlo device simulation data. This set of macroscopic equations is derived without invoking any phenomenological relations such as the Fourier law for heat flow and the Wiedemann-Franz law for thermal conductivity. The model is developed by taking the first four moments of the Boltzmann transport equation (BTE). This model taken into account the difference between the moments of the collision terms of the BTE both for bulk and inhomogeneous systems. The cause of the spurious velocity overshoot sometimes predicted by other models is identified. By introducing different levels of approximation, this system of hydrodynamic equations can be reduced to the conventional hydrodynamic or energy transport equations. The improved model appears to be more accurate than any existing approach for modeling silicon devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>