Low-pressure MOCVD of Al2O3 films using aluminium acetylacetonate as precursor: nucleation and growth

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.8K citations

Engineering, Band Gap, Semiconductor Device +16

The growth of single crystals

M. Schieber · Journal of Crystal Growth · 1971 · 249 citations

Single Crystals, Engineering, Crystal Material +6

Aluminum oxide thin films prepared by chemical vapor deposition from aluminum acetylacetonate

Toshiro Maruyama, Susumu Arai · Applied Physics Letters · 1992 · 112 citations

Aluminium Nitride, Aluminum Acetylacetonate, Engineering +18

Al2O3 films for integrated optics

M.K. Smit, G.A. Acket, C. J. van der Laan · Thin Solid Films · 1986 · 108 citations · Full text

Materials Science, Materials Engineering, Aluminium Nitride +9

Fabrication of aluminum oxide thin films by a low-pressure metalorganic chemical vapor deposition technique

J. S. Kim, H. A. Marzouk, P. J. Reucroft et al. · Applied Physics Letters · 1993 · 42 citations

Materials Science, Aluminium Nitride, Engineering +11