High rate etching of 6H–SiC in SF6-based magnetically-enhanced inductively coupled plasmas

High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

Farid Khan, I. Adesida · Applied Physics Letters · 1999 · 145 citations

Engineering, Sf6 Plasmas, Plasma Processing +16

Reactive ion etching of SiC thin films using fluorinated gases

J. Sugiura, W. Lu, Ken Cadien et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 99 citations

Engineering, Vacuum Device, Sio2 Films +18

High rate etching of 4H–SiC using a SF6/O2 helicon plasma

Pascal Chabert, N. Proust, J. Perrin et al. · Applied Physics Letters · 2000 · 59 citations

Materials Science, Electrical Engineering, Engineering +12

ICP etching of SiC

J. J. Wang, E. S. Lambers, S. J. Pearton et al. · Solid-State Electronics · 1998 · 54 citations

Materials Engineering, Materials Science, Engineering +6

Etching of SiC Using Inductively Coupled Plasma

Li‐Hui Cao, Binghui Li, Jian Hui Zhao · Journal of The Electrochemical Society · 1998 · 50 citations

Materials Engineering, Materials Science, Electrical Engineering +13