Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces: A reflection high-energy electron diffraction dynamics study of GaAs/Al<i>x</i>Ga1−<i>x</i>As(100) multiple quantum wells

Abstract

The static and dynamic behavior of reflection high-energy electron diffraction intensity is employed to demonstrate the existence of surface kinetics controlled optimum conditions for the customary molecular beam epitaxial growth of GaAs/AlAs superlattices. The quality of the interfaces formed even under such optimum conditions is shown to be critically dependent upon the individual layer thicknesses, even for ultrathin layers, and to deteriorate with the total superlattice thickness. Growth interruption after individual layer growth is shown to be only of partial, but significant, value in minimizing the adverse effect of the layer thickness.