Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET's

Abstract

We derived a simple formula for the subthreshold swing S in double-gate (DG) SOI MOSFET's. Our formula, which depends only on a scaling device parameter, matches the device simulation results. From these results, our equations are simple and give a scaling rule for DG-SOI MOSFET's.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>