Material potential and scalability challenges of germanium CMOS

Abstract

This paper overviews the present status of Ge MOSFET technology, particularly focusing on n-FETs in terms of materials science of GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ge gate stacks and device physics of inversion layer mobility, and then discusses future prospects and fundamental challenges for further miniaturization from the viewpoint of Ge/high-k gate stacks and ET-GeOI MOSFETs.