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Formation of submicron isolation in GaAs by implanting a focused boron ion beam emitted from a Pd–Ni–Si–Be–B LM ion source
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1985
Year
Materials ScienceElectrical EngineeringElectronic DevicesEngineeringIon ImplantationSemiconductor DeviceNew TypeBoron NitrideApplied PhysicsMaskless Ion ImplantationIon Beam InstrumentationIon BeamSemiconductor Device FabricationIntegrated CircuitsSubmicron IsolationMicroelectronicsCompound SemiconductorIon Source
We have developed a new type of alloyed liquid metal ion source for maskless ion implantation in III–V compound semiconductors. This ion source with alloys consisting of Pd (50), Ni (26), Si (5), Be (6), and B (13) is capable of emitting Si (n-type dopant), Be (p-type dopant), and B (device isolation) ions. Using this ion source, active regions (n-type GaAs, 2×1017/cm3) were isolated by single line implantation with a 100 keV focused B+ ion beam of 0.1 μm diam. A good isolation of submicron width (less than 0.5 μm) has been obtained. The resistivity of these isolated regions implanted with 2×1014 to 2×1015 ions/cm2 is found to be 104 to 105 Ω cm with breakdown voltages of 4 to 10 V after a heat treatment at 800 °C for 20 min. This result indicates that the submicron isolation using this technology can be maintained through the high-temperature device fabrication process.