Laser chemical technique for rapid direct writing of surface relief in silicon

Abstract

High-resolution etching of single-crystal and polycrystalline silicon has been demonstrated using an argon-ion laser to control microscopic chemical reactions. Gas-phase Cl2 or HCl is used in reactions initiated both by surface heating and by molecular photolysis. Features smaller than 5 μm and etch rates greater than 6 μm/s have been obtained. The process seems immediately suitable for a variety of problems in integrated-circuit fabrication.