Semiconductor Science and Technology · 1988 · 13 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsStrain EngineeringExcitation Spectra AnalysisPhotoluminescencePhotoluminescence In Quantum WellsPhotoluminescence SpectroscopyQuantum Well Band StructureQuantum Well StructuresStrain EffectsStrained Quantum Wells
The sub-band energies of InxGa1-xAs quantum wells strained between GaAs barriers and substrate are calculated using a model which takes into account strain, nonparabolicity and quantum well effects. A comparison is made with low-temperature photoluminescence and photoluminescence excitation spectra of InxGa1-xAs quantum wells for which x=0.28. The transitions 1H-1C, 1L-1C and 2H-2C have been identified for the 7.5 nm well.
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K.-H. Goetz, D. Bimberg, H. Jürgensen et al. · Journal of Applied Physics · 1983 · 361 citations
Optical investigation of highly strained InGaAs-GaAs multiple quantum wells
G. Ji, Daming Huang, U. K. Reddy et al. · Journal of Applied Physics · 1987 · 253 citations · Full text