A contribution to the analysis of the I–V characteristics of Schottky structures

Barrier inhomogeneities at Schottky contacts

J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations

Engineering, Electrical Engineering, Materials Science +17

Trends in power semiconductor devices

B. Jayant Baliga · IEEE Transactions on Electron Devices · 1996 · 446 citations

Engineering, Electrical Engineering, Microelectronics +13

Reverse current-voltage characteristics of metal-silicide Schottky diodes

J. M. Andrews, M.P. Lepselter · Solid-State Electronics · 1970 · 313 citations

Engineering, Electrical Engineering, Materials Science +14

Comment on “Analysis of I-V measurements on CrSi2Si Schottky structures in a wide temperature range”

Zs. J. Horváth · Solid-State Electronics · 1996 · 185 citations

Engineering, Materials Science, Physics +17

Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature range

D. Donoval, M. Barus, M. Zdimal · Solid-State Electronics · 1991 · 165 citations

Engineering, Electrical Engineering, Materials Science +14