Nanoscale electron beam induced etching: a continuum model that correlates the etch profile to the experimental parameters

Abstract

In this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution, and the etch product desorption kinetics have on the resultant nanoscale etching profile. Unlike analogous electron beam induced deposition models, it is shown that one must consider the diffusion, desorption, and possible re-dissociation of the resultant etch product to understand the observed etching profiles. To confirm the explanation of the etch results, a defocus experiment was performed showing transitions from the electron flux limited to the mass transport limited to the etch product dissociation limited regimes.