Applications of photoluminescence excitation spectroscopy to the study of indium gallium phosphide alloys

Abstract

Photoluminescence excitation spectroscopy of (InGaP) has been used to analyse alloy inhomogeneities and variations in impurity concentration which arise owing to growth by liquid phase epitaxy. The method has experimental advantages over absorption techniques for rapid assessment of III-V semiconductors. The effect of direct transitions in indirect alloys has been observed, and is consistent with previous estimates of the composition corresponding to the crossover from direct gap to indirect gap alloys