Applied Physics Letters · 1993 · 28 citations · 7 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsTwo-dimensional SemiconductorsAtomic Energy Level SplittingIntersubband TransitionsOptical Absorption In Quantum WellsQuantum Well HeterostructuresQuantum Well Structures
The well-width dependence of intersubband transition energies in InGaAs/AlAs pseudomorphic quantum well structures has been studied, and the shortest intersubband wavelength reported to date, 1.798 μm, has been observed for 6 monolayer wells. Both transverse electric and transverse magnetic optical polarizations are absorbed, with an energy splitting of 67 meV between them.
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InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μm
B. F. Levine, A. Y. Cho, J. Walker et al. · Applied Physics Letters · 1988 · 104 citations