Applied Physics Letters · 1991 · 98 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsInfrared DetectorsOptical Properties Of SemiconductorsPhotodetectorsQuantum WellsSemiconductor DetectorsSemiconductor PhysicsDetectorsExcitationOptical Absorption In Quantum WellsPhotodetectionQuantum Well HeterostructuresQuantum Well Infrared PhotodetectorsQuantum Well PhotodetectorsQuantum Well Structures
We propose and demonstrate a novel concept for intersubband detectors at operating wavelengths of 3–5 μm using GaAs quantum wells. An extremely large intersubband spacing is obtained by using ultrathin AlAs barriers on either side of the GaAs quantum wells followed by a thicker Al0.3Ga0.7As layer. Simultaneously, the confining AlAs layers act as tunnel barriers which allow an electrical detection of the intersubband excitation.
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