Applied Physics Letters · 1997 · 40 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor LasersSemiconductor SurfacesDevice FabricationDistributed Bragg Reflector LasersOxidationSelective OxidationSemiconductor Laser DiodesTunnel JunctionsVertical-cavity Surface-emitting LasersVoltage
Vertical cavity surface emitting lasers (VCSELs) are demonstrated with reverse-biased tunnel contact junctions allowing low-loss lateral electron current to support hole injection. A compact hybrid vertical cavity is employed consisting of a lower 6.5 period AlxOy/GaAs distributed Bragg reflector (DBR) formed by selective oxidation of high Al composition AlxGa1−xAs, and an electron-beam deposited 5 period SiO2/Si upper DBR. The cavity (active region) is defined also by selectively oxidizing a current-confining aperture. Lateral electron current drives a tunnel contact junction providing hole injection underneath the upper DBR through the oxide-defined current aperture. The p-type crystal in the VCSEL is reduced to a minimum, thus reducing resistive loss and device voltage.
11
Metalorganic Chemical Vapor Deposition of III-V Semiconductors
Russell D. Dupuis · Science · 1984 · 316 citations
S. A. Maranowski, A. R. Sugg, E. I. Chen et al. · Applied Physics Letters · 1993 · 105 citations