Native oxide top- and bottom-confined narrow stripe <i>p</i>-<i>n</i> Al<i>y</i>Ga1−<i>y</i>As-GaAs-In<i>x</i>Ga1−<i>x</i>As quantum well heterostructure laser

Abstract

A new form of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure (QWH) laser that is confined above and below the active region by an insulating low refractive index native oxide is demonstrated. The laser diodes are defined from a mesa edge by the selective lateral oxidation and anisotropic oxidation of high Al composition AlyGa1−yAs layers (y=0.85, 0.87) located above and below the QW and waveguide active region. This structure provides excellent current and optical confinement, resulting in continuous wave threshold currents of ∼8 mA and maximum output powers (uncoated laser) of 35 mW/ facet for a∼2.5 μm aperture.