Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy

Abstract

Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures (175–250 °C), the carrier mobility was also estimated. The influence of the growth temperature on the ultrafast carrier trapping is discussed.